K9F1208B0C SAMSUNG [Samsung semiconductor], K9F1208B0C Datasheet - Page 36

• Manufacturer Part Number: K9F1208B0C
• Description: 64M x 8 Bits NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1208U0C
K9F1208R0C
where I
Rp(max) is determined by maximum permissible limit of tr
Rp value guidance
L
is the sum of the input currents of all devices tied to the R/B pin.
Rp(min, 1.8V part) =
Rp(min, 2.7V part) =
Rp(min, 3.3V part) =
K9F1208B0C
100n
200n
100n
200n
100n
300n
200n
300n
300n
V
V
V
CC
CC
CC
(Max.) - V
(Max.) - V
(Max.) - V
Figure 17. Rp vs tr ,tf & Rp vs ibusy
2.3
2.4
I
I
I
1.7
1K
1K
OL
OL
OL
1K
30
30
2.3
100
3.6
1.7
@ Vcc = 2.7V, Ta = 25
@ Vcc = 3.3V, Ta = 25
@ Vcc = 1.8V, Ta = 25
+ ΣI
+ ΣI
+ ΣI
Ibusy
Ibusy
Ibusy
tf
tf
tf
OL
OL
OL
tr
tr
tr
L
L
L
(Max.)
(Max.)
(Max.)
60
0.85
60
1.2
200
1.1
2K
2K
2.3
2K
3.6
1.7
Rp(ohm)
Rp(ohm)
Rp(ohm)
36
=
=
=
0.75
300
90
0.8
3K
3K
3K
2.3
3.6
1.7
90
°C , C
°C , C
°C , C
0.57
3mA + ΣI
3mA + ΣI
8mA + ΣI
1.85V
2.5V
3.2V
L
L
L
2.3
1.7
= 30pF
= 100pF
= 30pF
0.6
400
3.6
120
0.43
120
4K
4K
4K
L
L
L
0.55
2m
2m
2m
3m
1m
3m
1m
3m
1m
FLASH MEMORY