K9F1208B0C SAMSUNG [Samsung semiconductor], K9F1208B0C Datasheet - Page 3

• Manufacturer Part Number: K9F1208B0C
• Description: 64M x 8 Bits NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1208U0C
K9F1208R0C
FEATURES
GENERAL DESCRIPTION
64M x 8 Bits NAND Flash Memory
PRODUCT LIST
• Voltage Supply
• Organization
• Automatic Program and Erase
• Page Read Operation
• Fast Write Cycle Time
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its
NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in
typical 200µs on the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can
be read out at 42ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input.
The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verifica-
tion and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0C′s extended reliability of 100K
program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F1208X0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
- Memory Cell Array : (64M + 2M) x 8bits
- Data Register : (512 + 16) x 8bits
- Page Program : (512 + 16) x 8bits
- Block Erase : (16K + 512)Bytes
- Page Size : (512 + 16)Bytes
- Random Access
- Serial Page Access : 42ns(Min.)
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
- Program/Erase Lockout During Power Transitions
- 1.8V Device(K9F1208R0C) : 1.65V ~ 1.95V
- 2.7V Device(K9F1208B0C) : 2.5V ~ 2.9V
- 3.3V Device(K9F1208U0C) : 2.7V ~ 3.6V
K9F1208U0C-P
K9F1208B0C-P
K9F1208R0C-J
K9F1208U0C-J
Part Number
K9F1208B0C
: 15µs(Max.)
1.65V ~ 1.95V
Vcc Range
2.5V ~ 2.9V
2.7V ~ 3.6V
3
• Reliable CMOS Floating-Gate Technology
• Command Register Operation
• Unique ID for Copyright Protection
• Package
- Endurance
- Data Retention : 10 Years
- K9F1208U0C-PCB0/PIB0 : Pb-Free Package
- K9F1208X0C-JCB0/JIB0: Pb-Free Package
- K9F1208B0C-PCB0/PIB0 : Pb-Free Package
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
63-Ball FBGA(8.5 x 13 x 1.2mmt)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
Organization
x8
(with 1bit/512Byte ECC)
: 100K Program/Erase Cycles
FLASH MEMORY
PKG Type
TSOP1
TSOP1
FBGA
FBGA