K9F1208B0C SAMSUNG [Samsung semiconductor], K9F1208B0C Datasheet - Page 37

• Manufacturer Part Number: K9F1208B0C
• Description: 64M x 8 Bits NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

Data Protection & Power-up sequence
K9F1208U0C
K9F1208R0C
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device), 1.8V(2.7V device), 2V(3.3V device). WP pin provides hard-
ware protection and is recommended to be kept at V
required before internal circuit gets ready for any command sequences as shown in Figure 18. The two step command sequence for
program/erase provides additional software protection.
WP
WE
V
Figure 18. AC Waveforms for Power Transition
CC
1.8V device : ~ 1.5V
2.7V device : ~ 2.0V
3.3V device : ~ 2.5V
K9F1208B0C
100µs
High
IL
during power-up and power-down. A recovery time of minimum 100µs is
37
FLASH MEMORY
1.8V device : ~ 1.5V
2.7V device : ~ 2.0V
3.3V device : ~ 2.5V