K9F1208D0A SAMSUNG [Samsung semiconductor], K9F1208D0A Datasheet - Page 45

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K9F1208D0A

Manufacturer Part Number
K9F1208D0A
Description
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
K9F1208D0A
K9F1208U0A
where I
Rp(max) is determined by maximum permissible limit of tr
Rp value guidance
L
is the sum of the input currents of all devices tied to the R/B pin.
Rp(min, 2.65V part) =
Rp(min, 3.3V part) =
K9F1216D0A
K9F1216U0A
100n
200n
100n
300n
200n
300n
V
V
CC
CC
(Max.) - V
(Max.) - V
2.3
2.4
I
I
1K
1K
OL
OL
30
2.3
100
3.6
@ Vcc = 2.65V, Ta = 25
@ Vcc = 3.3V, Ta = 25
+ I
+ I
Ibusy
Ibusy
tf
tf
OL
OL
tr
tr
L
L
(Max.)
(Max.)
60
200
1.2
1.1
2K
2K
2.3
3.6
Rp(ohm)
Rp(ohm)
45
=
=
300
0.75
0.8
3K
3K
3.6
2.3
90
C , C
3mA + I
8mA + I
C , C
2.5V
3.2V
2.3
L
L
0.6
400
120
= 100pF
3.6
4K
4K
= 30pF
L
L
0.55
2m
2m
3m
1m
3m
1m
FLASH MEMORY

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