GS881E18T GSI [GSI Technology], GS881E18T Datasheet

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GS881E18T

Manufacturer Part Number
GS881E18T
Description
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
Manufacturer
GSI [GSI Technology]
Datasheet
100-Pin TQFP
Commercial Temp
Industrial Temp
1.10 9/2000Features
• FT pin for user-configurable flow through or pipelined
• Dual Cycle Deselect (DCD) operation
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip write parity checking; even or odd selectable
• 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Common data inputs and data outputs
• Clock Control, registered, address, data, and control
• Internal self-timed write cycle
• Automatic power-down for portable applications
• 100-lead TQFP package
Functional Description
Applications
The GS881E18//36T is a 9,437,184-bit high performance
synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache
applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, E2), address burst
control inputs (ADSP, ADSC, ADV) and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
Rev: 1.10 9/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Through
Pipeline
3-1-1-1
2-1-1-1
operation
Flow
tCycle
tCycle
t
I
t
I
KQ
DD
KQ
DD
225 mA
180 mA
4.0 ns
10 ns
11 ns
15 ns
-11
225 mA
180 mA
11.5 ns
4.0 ns
10 ns
15 ns
-11.5
512K x 18, 256K x 36 ByteSafe™
225 mA
180 mA
4.0 ns
10 ns
12 ns
15 ns
-100
8Mb Sync Burst SRAMs
200 mA
175 mA
12.5 ns
4.5 ns
14 ns
15 ns
-80
185 mA
165 mA
5.0 ns
15 ns
18 ns
20 ns
-66
1/34
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
DCD Pipelined Reads
The GS881E18//36T is a DCD (Dual Cycle Deselect)
pipelined synchronous SRAM. SCD (Single Cycle Deselect)
versions are also available. DCD SRAMs pipeline disable
commands to the same degree as read commands. DCD RAMs
hold the deselect command for one full cycle and then begin
turning off their outputs just after the second rising edge of
clock.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the byte write
control inputs.
ByteSafe™ Parity Functions
The GS881E18/36T features ByteSafe data security functions.
See detailed discussion following.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(high) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS881E18//36T operates on a 3.3 V power supply, and all
inputs/outputs are 3.3 V- and 2.5 V-compatible. Separate
output power (V
from the internal circuit.
DDQ
GS881E18/36T-11/11.5/100/80/66
) pins are used to decouple output noise
© 2000, Giga Semiconductor, Inc.
3.3 V and 2.5 V I/O
100 MHz–66 MHz
Preliminary
3.3 V V
DD

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GS881E18T Summary of contents

Page 1

... DD Functional Description Applications The GS881E18//36T is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support. ...

Page 2

GS881E18 100-Pin TQFP Pinout 100 DDQ ...

Page 3

GS881E36 100-Pin TQFP Pinout 100 DDQ ...

Page 4

TQFP Pin Descriptio Pin Location 37, 36 35, 34, 33, 32, 100, 99, 82, 81, 44, 45, 46, 47, 48, 49, 50 63, 62, 59, 58, 57, 56, 53, 52 68, 69, 72, 73, 74, 75, 78, 79 ...

Page 5

Pin Location 15, 41, 65, 91 5,10,17, 21, 26, 40, 55, 60, 67, 71, 76 11, 20, 27, 54, 61, 70, 77 Rev: 1.10 9/2000 Specifications cited are subject to change ...

Page 6

GS881E18/36 Block Diagram Register A0– LBO ADV CK ADSC ADSP Power Down ZZ Control Note: Only x36 version shown for ...

Page 7

... ByteSafe™ Parity Functions This SRAM includes a write data parity check that checks the validity of data coming into the RAM on write cycles. In Flow Through mode, write data errors are reported in the cycle following the data input cycle. In Pipeline mode, write data errors are reported one clock cycle later ...

Page 8

Mode Pin Functions Mode Name Burst Order Control Output Register Control Power Down Control ByteSafe Data Parity Control Note: There are pull-up devices on the LBO, DP and FT pins and a pull down device on the ZZ pin, so ...

Page 9

Byte Write Truth Table Function GW Read H Read H Write byte a H Write byte b H Write byte c H Write byte d H Write all bytes H Write all bytes L Notes: 1. All byte outputs are ...

Page 10

Synchronous Truth Table Address Operation Used Deselect Cycle, Power Down Deselect Cycle, Power Down Deselect Cycle, Power Down Read Cycle, Begin Burst External Read Cycle, Begin Burst External Write Cycle, Begin Burst External Read Cycle, Continue Burst Read Cycle, Continue ...

Page 11

Simplified State Diagram Notes: 1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low. 2. The upper portion of the diagram assumes active use of only the Enable (E1 and E2) and Write ...

Page 12

Simplified State Diagram with G Notes: 1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use Use of “Dummy Reads” (Read Cycles with G High) may be used to make ...

Page 13

Absolute Maximum Ratings (All voltages reference Symbol Description V Voltage Voltage in V DDQ DDQ V Voltage on Clock Input Pin CK V Voltage on I/O Pins I/O V Voltage on Other ...

Page 14

... Junction to Ambient (at 200 lfm) Junction to Ambient (at 200 lfm) Junction to Case (TOP) Notes: 1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper- ature air flow, board density, and PCB thermal resistance. 2. SCMI G-38-87 3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1 Rev: 1 ...

Page 15

AC Test Conditions Parameter Input high level Input low level Input slew rate Input reference level Output reference level Output load Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. ...

Page 16

Operating Currents Parameter Test Conditions Symbol Device Selected; Operating Pipeline All other inputs Current Output open Flow-Thru Standby Pipeline 0.2V DD Current Flow-Thru Device Deselected; Deselect Pipeline All other inputs Current V ...

Page 17

AC Electrical Characteristics Parameter Clock Cycle Time Clock to Output Valid Pipeline Clock to Output Invalid Clock to Output in Low-Z Clock Cycle Time Clock to Output Valid Flow- Thru Clock to Output Invalid Clock to Output in Low-Z Clock ...

Page 18

Write Cycle Timing Single Write ADSP ADSC ADV – WR1 – Hi-Z DQ – Rev: 1.10 ...

Page 19

Flow Through Read Cycle Timing Single Read ADSP ADSC tS ADV –A RD1 – tOE G tOLZ ...

Page 20

Flow Through Read-Write Cycle Timing Single Read ADSP ADSC ADV – RD1 – tOE G tKQ Hi-Z DQ –DQ ...

Page 21

Pipelined DCD Read Cycle Timing Single Read ADSP ADSC ADV –A RD1 – Hi-Z DQ – ...

Page 22

Pipelined DCD Read-Write Cycle Timing Single Read ADSP ADSC tS tH ADV – RD1 – Hi-Z DQ ...

Page 23

... Dummy read cycles waste performance but their use usually assures there will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste bandwidth on dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at bank address boundary crossings) but greater care must be exercised to avoid excessive bus contention ...

Page 24

JTAG Pin Descriptions Pin Pin Name I/O Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate from the TCK Test Clock In falling edge of TCK. Test Mode The TMS input ...

Page 25

JTAG TAP Block Diagram TDI TMS TCK Identification (ID) Register The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-DR state with the IDCODE command ...

Page 26

TDI input (while the previous contents are shifted out at TDO). For all instructions, the TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for ...

Page 27

EXTEST EXTEST is an IEEE 1149.1 mandatory public instruction executed whenever the instruction register, whatever length it may be in the device, is loaded with all logic 0s. EXTEST is not implemented in this device. Therefore, ...

Page 28

JTAG Port Recommended Operating Conditions and DC Characteristics Parameter Test Port Input High Voltage Test Port Input Low Voltage TMS, TCK and TDI Input Leakage Current TMS, TCK and TDI Input Leakage Current TDO Output Leakage Current Test Port Output ...

Page 29

JTAG Port Timing Diagram tTKL tTKH TCK TMS TDI TDO tTKQ JTAG Port AC Electrical Characteristics Parameter TCK Cycle Time TCK Low to TDO Valid TCK High Pulse Width TCK Low Pulse Width TDI & TMS Set Up Time TDI ...

Page 30

GS811E18/36T TQFP Boundary Scan Register Order x36 x18 Pin n n ...

Page 31

Output Driver Characteristics 120.0 100.0 Pull Down Drivers 80.0 60.0 40.0 20.0 0.0 -20.0 -40.0 -60.0 Pull Up Drivers -80.0 -100.0 -120.0 -140.0 -0 Rev: 1.10 9/2000 Specifications cited are subject to change without notice. For ...

Page 32

TQFP Package Drawing Symbol Description Min. Nom. Max A1 Standoff 0.05 A2 Body Thickness 1.35 b Lead Width 0.20 c Lead Thickness 0.09 D Terminal Dimension 21.9 D1 Package Body 19.9 E Terminal Dimension 15.9 E1 Package Body 13.9 e ...

Page 33

... GS881E36T-66I Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS881E18TT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user ...

Page 34

Revision History Types of Changes DS/DateRev. Code: Old; Format or Content New GS881E18/36TRev1.04h 5/ 1999; 1.05 9/1999I GS881E18/36T1.05 9/ 1999I;1.05 11/1999J GS881E18/36T1.05 11/ 1999K881E18/36T1.06 1/ 200010L GS881E18/36T1.06 1/ 2000L; GS881E18/36T1.07 3/ 2000N; GS881E18/36T1.07 3/ 2000N; GS881E18/36T1.08 3/ 2000O; 881E GS881E18/36T1.08 ...

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