GS881E18T GSI [GSI Technology], GS881E18T Datasheet - Page 14

• Manufacturer Part Number: GS881E18T
• Description: 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
• Manufacturer: GSI [GSI Technology]

Capacitance
(T
Note: These parameters are sample tested.
Package Thermal Characteristics
Notes:
1.
2.
3.
Rev: 1.10 9/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Undershoot Measurement and Timing
V
A
SS
= 25
– 2.0 V
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
50%
Input/Output Capacitance
V
V
SS
Junction to Ambient (at 200 lfm)
Junction to Ambient (at 200 lfm)
IH
o
Input Capacitance
C, f = 1 MH
Junction to Case (TOP)
Parameter
Rating
Z
, V
20% tKC
DD
= 3.3 V)
Symbol
C
C
I/O
IN
Layer Board
single
four
—
14/34
Test conditions
V
V
OUT
IN
Symbol
= 0 V
R
R
R
= 0 V
JA
JA
JC
Overshoot Measurement and Timing
V
DD
+ 2.0 V
50%
V
V
DD
IL
Max
Typ.
40
24
GS881E18/36T-11/11.5/100/80/66
9
4
6
20% tKC
Max.
5
7
Unit
C/W
C/W
C/W
© 2000, Giga Semiconductor, Inc.
Unit
Notes
pF
pF
1,2
1,2
3
Preliminary