HX6656 ETC1 [List of Unclassifed Manufacturers], HX6656 Datasheet - Page 3

• Manufacturer Part Number: HX6656
• Description: 32K x 8 ROM-SOI
• Manufacturer: ETC1 [List of Unclassifed Manufacturers]

RADIATION CHARACTERISTICS
Total Ionizing Radiation Dose
The ROM will meet all stated functional and electrical
specifications over the entire operating temperature range
after the specified total ionizing radiation dose. All electrical
and timing performance parameters will remain within
specifications after rebound at VDD = 5.5 V and T =125°C
extrapolated to ten years of operation. Total dose hardness
is assured by wafer level testing of process monitor transis-
tors and ROM product using 10 keV X-ray and Co60
radiation sources. Transistor gate threshold shift correla-
tions have been made between 10 keV X-rays applied at a
dose rate of 1x10
rays (Cobalt 60 source) to ensure that wafer level X-ray
testing is consistent with standard military radiation test
environments.
Transient Pulse Ionizing Radiation
The ROM is capable of reading and retaining stored data
during and after exposure to a transient ionizing radiation
pulse of ≤1 µs duration up to 1x10
under recommended operating conditions. To ensure va-
lidity of all specified performance parameters before, dur-
ing, and after radiation (timing degradation during tran-
sient pulse radiation (timing degradation during transient
pulse radiation is ≤10%), it is suggested that stiffening
capacitance be placed on or near the package VDD and
VSS, with a maximum inductance between the package
(chip) and stiffening capacitance of 0.7 nH per part. If
there are no operate-through requirements, typical circuit
board mounted de-coupling capacitors are recommended.
RADIATION HARDNESS RATINGS (1)
(1) Device will not latch up due to any of the specified radiation exposure conditions.
(2) Operating conditions (unless otherwise specified): VDD=4.5 V to 5.5 V, TA=-55°C to 125°C.
(3) Not guaranteed with 28–Lead DIP.
Total Dose
Transient Dose Rate Upset (3)
Transient Dose Rate Survivability (3)
Neutron Fluence
Parameter
5
rad(SiO
2
)/min at T = 25°C and gamma
9
rad(Si)/s, when applied
≥1x10
≥1x10
≥1x10
≥1x10
Limits (2)
6
9
11
14
3
The ROM will meet any functional or electrical specifica-
tion after exposure to a radiation pulse of ≤50 ns duration
up to 1x10
operating conditions.
Neutron Radiation
The ROM will meet any functional or timing specification
after a total neutron fluence of up to 1x10
under recommended operating or storage conditions. This
assumes an equivalent neutron energy of 1 MeV.
Single Event Phenomena
All storage elements within the ROM are immune to single
event upsets. No access time or other performance deg-
radation will occur for LET 190 MeV/cm/mg
Latchup
The ROM will not latch up due to any of the above radiation
exposure conditions when applied under recommended
operating conditions. Fabrication with the SIMOX sub-
strate material provides oxide isolation between adjacent
PMOS and NMOS transistors and eliminates any potential
SCR latchup structures. Sufficient transistor body tie con-
nections to the p- and n-channel substrates are made to
ensure no source/drain snapback occurs.
11
rad(Si)/s, when applied under recommended
rad(SiO
rad(Si)/s
rad(Si)/s
Units
N/cm
2
2
)
1 MeV equivalent energy,
Unbiased, T
T
Pulse width ≤1 µs
Pulse width ≤50 ns, X-ray,
VDD=6.0 V, T
A
Test Conditions
=25°C
14
HX6656
A
2
=25°C
cm
.
A
=25°C
-2
applied