HX6656 ETC1 [List of Unclassifed Manufacturers], HX6656 Datasheet - Page 5

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HX6656

Manufacturer Part Number
HX6656
Description
32K x 8 ROM-SOI
Manufacturer
ETC1 [List of Unclassifed Manufacturers]
Datasheet
VOL
IDDOPR
VIL
VIH
DC ELECTRICAL CHARACTERISTICS
IDDSB1
IDDSBMF Standby Supply Current - Deselected
II
IOZ
VOH
(1) Typical operating conditions: VDD= 5.0 V,TA=25°C, pre-radiation.
(2) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55°C to +125°C, post total dose at 25°C.
(3) All inputs switching. DC average current.
Symbol
Static Supply Current
Dynamic Supply Current, Selected
Input Leakage Current
Output Leakage Current
Low-Level Input Voltage
High-Level Input Voltage
Low-Level Output Voltage
High-Level Output Voltage
Parameter
output
DUT
Tester Equivalent Load Circuit
2.9 V
249Ω
C L >50 pF*
*C L = 5 pF for TWLQZ, TSHQZ, TELQZ, and TGHQZ
CMOS
TTL
CMOS
TTL
Vref1
Vref2
Typical
5
+
+
-
-
(1)
Worst Case
V
Valid high
0.7xV
Valid low
DD
Min
output
2.2
4.2
output
-1
-1
-0.05
DD
0.3xV
Max
0.05
1.5
1.5
4.0
0.4
+1
+1
0.8
(2)
DD
Units
mA
mA
mA
µA
µA
V
V
V
V
V
V
V
V
VDD = 4.5V
VDD = 5.5V
VIH=VDD IO=0
VIL=VSS Inputs Stable
NCS=VDD, IO=0,
f=40 MHz
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS
VSS≤VI≤VDD
VSS≤VIO≤VDD
Output=high Z
VDD = 4.5V, IOL = 10 mA
VDD = 4.5V, IOL = 200 µA
VDD = 4.5V, IOH = -5 mA
VDD = 4.5V, IOH = -200 µA
Test Conditions
HX6656

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