HAT2285WP-EL-E RENESAS [Renesas Technology Corp], HAT2285WP-EL-E Datasheet
HAT2285WP-EL-E
Manufacturer Part Number
HAT2285WP-EL-E
Description
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
1.HAT2285WP-EL-E.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HAT2285WP-EL-E
Manufacturer:
LT
Quantity:
9 140
HAT2285WP
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Rev.3.00 Apr 05, 2006 page 1 of 9
RENESAS Package code: PWSN0008DB-A
(Package name: WPAK-D)
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Built-in Schottky Barrier Diode
2. Tc = 25°C
5
Item
6
10 s, duty cycle
7
8
4
3
2 1
I
1 %
D(pulse)
Pch
Symbol
V
V
Tstg
Tch
I
I
DSS
GSS
DR
D
Note2
Note1
G1
2
S1/D2(kelvin)
MOS1
D1
7
1
–55 to +150
8
D1
MOS1
150
±20
30
14
56
14
8
G2
4
Ratings
S1/D2
MOS2 and
Schottky Barrier Diode
S2
3
5
S1/D2
6
MOS2 & SBD
–55 to +150
±12
150
30
22
88
22
15
REJ03G1371-0300
1, 3
2, 4
5, 6, 7, 8 Drain
Apr 05, 2006
(Ta = 25°C)
Unit
°
°
Rev.3.00
W
V
V
A
A
A
C
C
Source
Gate
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