HAT2285WP-EL-E RENESAS [Renesas Technology Corp], HAT2285WP-EL-E Datasheet - Page 3

• Manufacturer Part Number: HAT2285WP-EL-E
• Description: Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2285WP
Electrical Characteristics
Rev.3.00 Apr 05, 2006 page 3 of 9
MOS1
200
150
100
16
12
50
20
10
8
4
0
0
0
Drain to Source Saturation Voltage vs
Drain to Source Voltage V
Gate to Source Voltage V
Power vs. Temperature Derating
Pulse Test
Typical Output Characteristics
Case Temperature Tc (°C)
4.5 V
10 V
Gate to Source Voltage
4
50
8
100
5
12
V
Pulse Test
150
GS
I
16
D
GS
= 2.8 V
DS
= 5 A
3.6 V
3.2 V
2 A
1 A
(V)
(V)
200
20
10
1000
0.01
100
100
0.1
Static Drain to Source on State Resistance
20
10
10
10
1
1
0
0.1
0.1
Operation in
this area is
limited by R
Drain to Source Voltage V
Tc = 25°C
1 shot Pulse
Gate to Source Voltage V
V
Typical Transfer Characteristics
Maximum Safe Operation Area
GS
= 4.5 V
2
Drain Current I
10 V
vs. Drain Current
DS(on)
1
1
−25°C
4
Tc = 75°C
25°C
6
10
10
D
V
Pulse Test
Pulse Test
DS
(A)
8
GS
DS
= 10 V
(V)
(V)
100
100
10