HAT2285WP-EL-E RENESAS [Renesas Technology Corp], HAT2285WP-EL-E Datasheet - Page 7

• Manufacturer Part Number: HAT2285WP-EL-E
• Description: Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2285WP
Rev.3.00 Apr 05, 2006 page 7 of 9
100
Static Drain to Source on State Resistance
–25
50
20
10
50
40
30
20
10
50
40
30
20
10
5
2
1
0
0.1
0
V
Pulse Test
I
Reverse Drain Current I
V
D
DS
Dynamic Input Characteristics
Case Temperature Tc (°C)
GS
= 22 A
0.3
Body-Drain Diode Reverse
0
10
Gate Charge Qg (nC)
10 V
= 4.5 V
V
25
DD
vs. Temperature
Recovery Time
1
V
= 25 V
DD
20
10 V
50
5 V
di / dt = 100 A / µs
V
= 25 V
GS
3
10 V
1 A, 2 A, 5 A
5 V
1 A, 2 A, 5 A
75
= 0, Ta = 25°C
30
10
100 125 150
V
GS
DR
40
30
(A)
100
50
10
8
6
4
2
0
10000
5000
2000
1000
100
100
500
200
100
0.5
0.2
0.1
50
20
10
50
20
10
50
10
20
5
5
1
2
2
1
0.1 0.2
0.1 0.2
0
Drain to Source Voltage V
V
f = 1 MHz
V
Rg =4.7 Ω, duty ≤ 1 %
Forward Transfer Admittance vs.
GS
GS
5
= 0
Switching Characteristics
= 10 V, V
Tc = –25°C
Drain to Source Voltage
75°C
Typical Capacitance vs.
0.5
0.5
Drain Current I
Drain Current I
10
Drain Current
1
1
25°C
t d(off)
DD
2
2
= 10 V
15
5
5
t r
20
10 20
10 20
D
D
V
Pulse Test
DS
(A)
(A)
t f
= 10 V
t d(on)
25
DS
Coss
Ciss
Crss
50 100
50 100
(V)
30