HAT2285WP-EL-E RENESAS [Renesas Technology Corp], HAT2285WP-EL-E Datasheet - Page 6

• Manufacturer Part Number: HAT2285WP-EL-E
• Description: Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2285WP
Rev.3.00 Apr 05, 2006 page 6 of 9
MOS2 & Schottky Barrier Diode
160
120
40
30
20
10
20
10
80
40
0
0
0
Drain to Source Saturation Voltage vs
Drain to Source Voltage V
Gate to Source Voltage V
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature Tc (°C)
2
5 V
Gate to Source Voltage
10 V
50
4
5
6
100
Pulse Test
8
V
Pulse Test
GS
I
150
GS
= 2.3 V
D
DS
10
2.8 V
2.6 V
2.4 V
= 5 A
2 A
1 A
(V)
(V)
12
10
200
1000
0.01
100
100
Static Drain to Source on State Resistance
0.1
20
10
10
10
1
1
0
0.1
0.1
Operation in
this area is
limited by R
Drain to Source Voltage V
Pulse Test
Tc = 25°C
1 shot Pulse
Gate to Source Voltage V
Typical Transfer Characteristics
Maximum Safe Operation Area
V
GS
1
10 V
Drain Current I
= 4.5 V
vs. Drain Current
DS(on)
1
1
2
−25°C
3
Tc = 75°C
25°C
10
10
D
V
Pulse Test
DS
(A)
4
= 10 V
GS
DS
(V)
(V)
100
100
5