HAT2285WP-EL-E RENESAS [Renesas Technology Corp], HAT2285WP-EL-E Datasheet - Page 4

• Manufacturer Part Number: HAT2285WP-EL-E
• Description: Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2285WP
Rev.3.00 Apr 05, 2006 page 4 of 9
100
Static Drain to Source on State Resistance
–25
50
20
10
50
40
30
20
10
50
40
30
20
10
5
2
1
0
0.1
0
Pulse Test
V
V
I
Reverse Drain Current I
D
DS
Dynamic Input Characteristics
GS
Case Temperature Tc (°C)
= 14 A
0
0.3
Body-Drain Diode Reverse
10 V
= 4.5 V
Gate Charge Qg (nC)
4
25
vs. Temperature
Recovery Time
1
V
DD
V
8
50
DD
= 25 V
3
10 V
di / dt = 100 A / µs
V
= 25 V
5 V
GS
1 A, 2 A, 5 A
10 V
75
I
D
5 V
12
= 0, Ta = 25°C
= 1 A, 2 A
10
100 125 150
DR
16
30
V
GS
(A)
5 A
100
20
20
16
12
8
4
0
10000
5000
2000
1000
500
200
100
100
100
0.5
0.2
0.1
50
20
10
50
10
50
20
10
20
5
2
5
1
1
2
0.1 0.2
0.1 0.2
0
V
f = 1 MHz
Drain to Source Voltage V
V
Rg =4.7 Ω, duty ≤ 1 %
Forward Transfer Admittance vs.
GS
GS
= 0
Tc = –25°C
= 10 V, V
5
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
75°C
0.5
0.5
Drain Current I
Drain Current I
10
Drain Current
t d(off)
1
1
25°C
DD
2
2
= 10 V
15
5
5
10 20
20
10 20
D
D
V
Pulse Test
DS
(A)
(A)
= 10 V
t r
t f
t d(on)
25
DS
Coss
Ciss
Crss
50 100
50 100
(V)
30