K9K8G08U0M Samsung, K9K8G08U0M Datasheet - Page 10

• Manufacturer Part Number: K9K8G08U0M
• Description: 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
• Manufacturer: Samsung

Memory Map
K9K8G08U0M is arranged in four 2Gb memory planes. Each plane contains 2,048 blocks and 2112 byte page registers. This allows it
to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is
configured so that two-plane program/erase operations can be executed by dividing the memory array into plane 0~1 or plane 2~3
separately.
For example, two-plane program/erase operation into plane 0 and plane 2 is prohibited. That is to say, two-plane program/erase oper-
ation into plane 0 and plane 1 or into plane 2 and plane 3 is allowed
K9WAG08U1M
K9K8G08U0M
2112byte Page Registers
Block 0
Block 2
Block 4092
Block 4094
(2048 Block)
Page 62
Page 62
Page 63
Page 63
Page 62
Page 62
Plane 0
Page 63
Page 63
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
2112byte Page Registers
Block 1
Block 3
Block 4093
Block 4095
(2048 Block)
Page 62
Page 62
Page 63
Page 63
Page 62
Page 62
Page 63
Page 63
Page 0
Page 1
Page 0
Page 1
Plane 1
Page 0
Page 1
Page 0
Page 1
10
2112byte Page Registers
Block 4096
Block 4098
Block 8188
Block 8190
(2048 Block)
Page 62
Page 62
Page 63
Page 63
Page 62
Page 62
Page 63
Page 63
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Plane 2
FLASH MEMORY
2112byte Page Registers
Block 4097
Block 4099
Block 8189
Block 8191
(2048 Block)
Preliminary
Page 62
Page 62
Page 63
Page 63
Page 62
Page 62
Plane 3
Page 63
Page 63
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1