K9K8G08U0M Samsung, K9K8G08U0M Datasheet - Page 12

• Manufacturer Part Number: K9K8G08U0M
• Description: 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
• Manufacturer: Samsung

AC TEST CONDITION
(K9XXG08UXM-XCB0: T
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
VALID BLOCK
NOTE :
1. The device may include initial invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit/512Byte ECC.
3. The number of valid block is on the basis of single plane operations, and this may be decreased with two plane operations.
* : Each K9K8G08U0M chip in the K9WAG08U1M has Maximun 160 invalid blocks.
K9WAG08U1M
K9K8G08U0M
Input/Output Capacitance
Input Capacitance
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
K9K8G08U0M
K9WAG08U1M
presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or pro-
gram factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks.
CLE
H
H
X
X
X
X
X
K9WAG08U1M-IXB0’s capacitance(I/O, Input) is 20pF.
L
L
L
L
2. WP should be biased to CMOS high or CMOS low for standby.
Parameter
Item
ALE
IL
X
H
H
X
X
X
X
L
L
L
L
or V
(1)
(
Parameter
T
A
IH.
A
=25°C, V
=0 to 70°C, K9XXG08UXM-XIB0:T
Symbol
CE
C
H
C
L
L
L
L
L
L
X
X
X
X
CC
I/O
IN
=3.3V, f=1.0MHz)
Symbol
N
N
VB
VB
Test Condition
WE
H
X
X
X
X
X
V
V
IN
IL
=0V
=0V
16,064*
A
8,032
=-40 to 85°C ,K9XXG08UXM: Vcc=2.7V~3.6V unless otherwise noted)
RE
Min
H
H
H
H
H
H
X
X
X
X
12
1 TTL GATE and CL=50pF (K9K8G08U0M-Y,P/K9WAG08U1M-I)
1 TTL GATE and CL=30pF (K9WAG08U1M-Y,P)
Min
-
-
0V/V
WP
H
H
H
H
H
X
X
X
X
L
CC
(2)
Typ.
-
-
Read Mode
Data Input
Data Output
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
K9K8G08U0M
Write Mode
K9XXG08UXM
0V to Vcc
Vcc/2
20
20
5ns
FLASH MEMORY
16,384*
Command Input
Address Input(5clock)
Command Input
Address Input(5clock)
8,192
Max
Max
Mode
K9WAG08U1M*
Preliminary
40
40
Blocks
Blocks
Unit
Unit
pF
pF