K9K8G08U0M Samsung, K9K8G08U0M Datasheet - Page 18

• Manufacturer Part Number: K9K8G08U0M
• Description: 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
• Manufacturer: Samsung

NAND Flash Technical Notes
Copy-Back Operation with EDC & Sector Definition for EDC
Generally, copy-back program is very powerful to move data stored in a page without utilizing any external memory. But, if the source
page has one bit error due to charge loss or charge gain, then without EDC, the copy-back program operation could also accumulate
bit errors.
K9K8G08U0M supports copy-back with EDC to prevent cumulative bit errors. To make EDC valid, the page program operation
should be performed on either whole page(2112byte) or sector(528byte). EDC status bits are not available for sectors within
which some bits or bytes are modified by Random Data Input operation. However, in case of the one time 528 byte sector
unit modification at the same address, EDC status bits are available.
spare area.
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most sig-
nificant bit) pages of the block. Random page address programming is prohibited.
Table 2. Definition of the 528-Byte Sector
A 2,112-byte page is composed of 4 sectors of 528-byte and each 528-byte sector is composed of 512-byte main area and 16-byte
K9WAG08U1M
K9K8G08U0M
2’nd 528-Byte Sector
3’rd 528-Byte Sector
1’st 528-Byte Sector
4’th 528-Byte Sector
(1’st sector)
"A" area
512 Byte
Sector
Page 63
Page 31
Page 2
Page 1
Page 0
From the LSB page to MSB page
DATA IN: Data (1)
(2’nd sector)
512 Byte
"B" area
Area Name
Data register
Main Field (2,048 Byte)
"A"
"B"
"C"
"D"
Main Field (Column 0~2,047)
(64)
(32)
(3)
(2)
(1)
:
:
(Continued)
Data (64)
(3’rd sector)
"C" area
512 Byte
Column Address
1,024 ~ 1,535
1,536 ~ 2,047
512 ~ 1,023
0 ~ 511
18
(4’th sector)
"D" area
512 Byte
Page 63
Page 31
Page 2
Page 1
Page 0
Ex.) Random page program (Prohibition)
DATA IN: Data (1)
Area Name
(1’st sector)
Spare Field (Column 2,048~2,111)
"G"
"E"
"F"
"H"
"E" area
16 Byte
Data register
FLASH MEMORY
Spare Field (64 Byte)
(2’nd sector)
(64)
(32)
(1)
(3)
(2)
"F" area
16 Byte
:
:
Column Address
Data (64)
Preliminary
2,048 ~ 2,063
2,064 ~ 2,079
2,080 ~ 2,095
2,096 ~ 2,111
(3’rd sector)
"G" area
16 Byte
(4’th sector)
"H" area
16 Byte