K9K8G08U0M Samsung, K9K8G08U0M Datasheet - Page 27

• Manufacturer Part Number: K9K8G08U0M
• Description: 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
• Manufacturer: Samsung

Status Read Cycle & EDC Status Read Cycle
I/Ox
Serial Access Cycle after Read
CE
RE
R/B
CLE
CE
WE
RE
I/Ox
K9WAG08U1M
K9K8G08U0M
t
RR
NOTES : Transition is measured at ±200mV from steady state voltage with load.
t
RP
t
t
REA
CEA
t
RC
This parameter is sampled and not 100% tested.
tRLOH is valid when frequency is higher than 33MHz.
tRHOH starts to be valid when frequency is lower than 33MHz.
t
REH
(EDO Type, CLE=L, WE=H, ALE=L)
t
Dout
CLS
t
CS
70h or 7Bh
t
t
RLOH
WP
t
DS
t
REA
t
t
t
CH
DH
CLH
27
t
WHR
t
CLR
t
IR
t
CEA
t
REA
FLASH MEMORY
Status Output
Preliminary
t
RHOH
t
t
t
t
t
t
RHZ
CHZ
t
COH
RHOH
CHZ
RHZ
Dout
COH