K9K4G16Q0M SAMSUNG [Samsung semiconductor], K9K4G16Q0M Datasheet - Page 12

• Manufacturer Part Number: K9K4G16Q0M
• Description: 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9W8G08U1M
K9K4G08Q0M
K9K4G08U0M
AC Characteristics for Operation
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
Parameter
K9K4G16Q0M
K9K4G16U0M
Symbol
t
t
t
t
t
t
t
t
t
WHR
t
t
CLR
t
t
t
REA
CEA
RHZ
CHZ
REH
RST
t
WB
OH
t
AR
RR
RP
RC
IR
R
12
K9K4GXXQ0M(1.8V)
K9K4G16U0M(3.3V)
Min
10
10
20
25
50
15
15
60
0
-
-
-
-
-
-
-
5/10/500
Max
100
25
30
45
30
20
-
-
-
-
-
-
-
-
-
(1)
K9XXG08UXM(3.3V)
Min
10
10
20
15
30
15
10
60
0
-
-
-
-
-
-
-
FLASH MEMORY
5/10/500
Max
100
25
18
23
30
20
-
-
-
-
-
-
-
-
-
(1)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s