K9K4G16Q0M SAMSUNG [Samsung semiconductor], K9K4G16Q0M Datasheet - Page 9

• Manufacturer Part Number: K9K4G16Q0M
• Description: 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9W8G08U1M
K9K4G08Q0M
K9K4G08U0M
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9XXGXXUXM-XCB0
DC AND OPERATING CHARACTERISTICS
NOTE : V
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Current
Operat-
Current
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Supply Voltage
Maximum DC voltage on input/output pins is V
ing
Parameter
IL
Parameter
can undershoot to -0.4V and V
Page Read with
Serial Access
Program
Erase
Parameter
Symbol
K9K4G16Q0M
K9K4G16U0M
V
V
K9XXGXXUXM-XCB0
K9XXGXXUXM-XIB0
K9XXGXXUXM-XCB0
K9XXGXXUXM-XIB0
CC
SS
Symbol
I
SS
OL
I
I
I
I
I
V
V
V
V
CC
CC
CC
SB
SB
I
(R/B)
I
LO
OH
LI
IH*
OL
IL*
1
2
1
2
3
IH
can overshoot to V
1.70
Min
0
tRC=50ns, CE=V
I
CE=V
CE=V
WP=PRE=0V/V
V
V
K9K4GXXQ0M :I
K9XXGXXUXM :I
K9K4GXXQ0M :I
K9XXGXXUXM :I
K9K4GXXQ0M :V
K9XXGXXUXM :V
OUT
CC,
IN
OUT
=0 to Vcc(max)
+0.3V which, during transitions, may overshoot to V
K9K4GXXQ0M(1.8V)
=0mA
=0 to Vcc(max)
IH
CC
Test Conditions
, WP=PRE=0V/V
-0.2,
:
T
A
Typ.
=0 to 70 C, K9XXGXXUXM-XIB0
1.8
0
CC
-
-
-
-
CC
OH
OL
IL
OH
OL
+0.4V for durations of 20 ns or less.
OL
OL
=100uA
Symbol
=-100 A
=2.1mA
=-400 A
V
=0.1V
(Recommended operating conditions otherwise noted.)
=0.4V
T
T
IN/OUT
V
Ios
BIAS
STG
CC
9
CC
Max
1.95
0
0.8xVcc
Vcc-0.1
K9K4GXXQ0M(1.8V)
Min
-0.3
K9K4GXXQ0M(1.8V) K9XXGXXUXM(3.3V)
3
-
-
-
-
-
-
-
-
-0.6 to + 2.45
-0.2 to + 2.45
Min
2.7
Typ
10
10
10
20
0
4
-
-
-
-
-
-
-
:
K9XXGXXUXM(3.3V)
T
A
V
0.2xVcc
CC
=-40 to 85 C)
CC
Max
-10 to +125
-40 to +125
-65 to +150
100
+2.0V for periods <20ns.
0.1
20
20
20
1
20
20
-
-
+0.3 0.8xVcc
Rating
Typ.
5
3.3
0
FLASH MEMORY
K9XXGXXUXM(3.3V)
Min
-0.3
2.4
8
-
-
-
-
-
-
-
-
-0.6 to + 4.6
-0.6 to + 4.6
Typ
Max
15
15
15
20
10
3.6
-
-
-
-
-
-
-
0
V
0.2xVcc
CC
Max
100
0.4
30
30
30
1
20
20
-
-
+0.3
Unit
Unit
mA
V
V
V
C
C
Unit
mA
mA
V
A