K9K4G16Q0M SAMSUNG [Samsung semiconductor], K9K4G16Q0M Datasheet - Page 36

• Manufacturer Part Number: K9K4G16Q0M
• Description: 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9W8G08U1M
K9K4G08Q0M
K9K4G08U0M
Power-On Auto-Read
The device is designed to offer automatic reading of the first page without command and address input sequence during power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activation of auto-
page read function. Auto-page read function is enabled only when PRE pin is tied to V
without latency. Power-On Auto Read mode is available only on 3.3V device(K9XXGXXUXM).
Figure 16. Power-On Auto-Read
V
CLE
CE
WE
ALE
PRE
R/B
RE
I/O
CC
X
K9K4G16Q0M
K9K4G16U0M
~ 1.8V
(3.3V device only)
t
R
36
cc.
Serial access may be done after power-on
1st
FLASH MEMORY
2nd
3rd
....
n th