K9K4G16Q0M SAMSUNG [Samsung semiconductor], K9K4G16Q0M Datasheet - Page 37

• Manufacturer Part Number: K9K4G16Q0M
• Description: 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9W8G08U1M
K9K4G08Q0M
K9K4G08U0M
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 17). Its value can be
determined by the following guidance.
V
100n
200n
300n
CC
GND
Rp value guidance
Rp(min, 1.8V part) =
Rp(min, 3.3V part) =
Rp(max) is determined by maximum permissible limit of tr
1.7
1K
30
1.7
@ Vcc = 1.8V, Ta = 25
Device
Ibusy
open drain output
tf
tr
60
K9K4G16Q0M
K9K4G16U0M
0.85
2K
1.7
R/B
where I
Rp(ohm)
Rp
V
V
L
90
CC
CC
3K
1.7
is the sum of the input currents of all devices tied to the R/B pin.
(Max.) - V
0.57
(Max.) - V
C , C
Figure 17. Rp vs tr ,tf & Rp vs ibusy
ibusy
I
I
OL
OL
C
L
1.7
+ I
+ I
L
= 30pF
120
0.43
4K
OL
OL
L
L
(Max.)
(Max.)
Ready Vcc
2m
3m
1m
=
=
37
50n
100n
150n
tf
3mA + I
8mA + I
1.85V
1.8V device - V
3.3V device - V
3.2V
VOL
L
L
2.4
1K
50
1.8
@ Vcc = 3.3V, Ta = 25
Ibusy
tf
Busy
OL
OL
tr
: 0.1V, V
: 0.4V, V
100
1.2
2K
1.8
FLASH MEMORY
Rp(ohm)
OH
OH
: Vcc
: 2.4V
150
0.8
3K
1.8
C , C
Q
tr
-0.1V
L
0.6
200
= 50pF
1.8
4K
VOH
2m
3m
1m