K9K4G16Q0M SAMSUNG [Samsung semiconductor], K9K4G16Q0M Datasheet - Page 17

• Manufacturer Part Number: K9K4G16Q0M
• Description: 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9W8G08U1M
K9K4G08Q0M
K9K4G08U0M
Figure 5. Read Operation with CE don’ t-care.
System Interface Using CE don’ t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal
2112byte(X8 device) or 1056word(X16 device) data registers are utilized as separate buffers for this operation and the system
design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activat-
ing CE during the data-loading and serial access would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’ t-care.
CLE
ALE
CE
WE
I/Ox
CLE
ALE
R/B
CE
WE
RE
I/Ox
CE
WE
00h
80h
K9K4G16Q0M
K9K4G16U0M
Address(5Cycles)
t
CS
Address(5Cycle)
t
WP
t
CH
30h
Data Input
t
R
17
I/O
CE
RE
0
~
7
CE don’ t-care
t
CEA
Data Output(serial access)
t
REA
CE don’ t-care
FLASH MEMORY
Data Input
out
10h