MK20FN1M0VMD12 Freescale Semiconductor, MK20FN1M0VMD12 Datasheet - Page 37

• Manufacturer Part Number: MK20FN1M0VMD12
• Description: ARM Microcontrollers - MCU KINETIS 1MB USB
• Manufacturer: Freescale Semiconductor

Specifications of MK20FN1M0VMD12

• Rohs: yes
• Core: ARM Cortex M4
• Processor Series: K20
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 120 MHz
• Program Memory Size: 1 MB
• Data Ram Size: 128 KB
• On-chip Adc: Yes
• Operating Supply Voltage: 1.71 V to 3.6 V
• Operating Temperature Range: - 40 C to + 105 C
• Package / Case: MAPBGA-144
• Mounting Style: SMD/SMT

1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
2. Cycling endurance represents number of program/erase cycles at -40°C ≤ T
3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFE to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
where
Freescale Semiconductor, Inc.
n
n
t
n
n
n
t
nvmretee100
n
nvmwree128
nvmwree512
nvmretee10
n
Symbol
nvmwree16
nvmwree2k
nvmwree4k
nvmcycee
• Writes_subsystem — minimum number of writes to each FlexRAM location for
nvmcycd
25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering
Bulletin EB619.
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and
typical values assume all byte-writes to FlexRAM.
subsystem (each subsystem can have different endurance)
Cycling endurance
Data retention up to 100% of write endurance
Data retention up to 10% of write endurance
Cycling endurance for EEPROM backup
Write endurance
Description
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 2,048
• EEPROM backup to FlexRAM ratio = 4,096
Table 23. NVM reliability specifications (continued)
EEPROM – 2 × EEESPLIT × EEESIZE
K20 Sub-Family Data Sheet, Rev. 4, 10/2012.
EEESPLIT × EEESIZE
FlexRAM as EEPROM
630 K
2.5 M
10 M
20 M
10 K
20 K
70 K
Min.
20
5
Peripheral operating requirements and behaviors
175 K
1.6 M
6.4 M
Typ.
25 M
50 M
j
50 K
50 K
100
≤ 125°C.
50
× Write_efficiency × n
1
Max.
—
—
—
—
—
—
—
—
—
cycles
cycles
writes
writes
writes
writes
writes
years
years
Unit
nvmcycee
Notes
2
2
3
37