IS42S32800B-7TL ISSI, Integrated Silicon Solution Inc, IS42S32800B-7TL Datasheet - Page 40
![IC SDRAM 256MBIT 143MHZ 86TSOP](/photos/7/23/72336/is42s32800b-7tl_sml.jpg)
IS42S32800B-7TL
Manufacturer Part Number
IS42S32800B-7TL
Description
IC SDRAM 256MBIT 143MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS42S32800B-7BL.pdf
(62 pages)
Specifications of IS42S32800B-7TL
Package / Case
86-TSOPII
Memory Size
256M (8Mx32)
Format - Memory
RAM
Memory Type
SDRAM
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Data Bus Width
32 bit
Organization
2 Mbit x 32
Maximum Clock Frequency
143 MHz
Access Time
7 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
150 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
706-1025
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S32800B-7TL
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS42S32800B-7TL
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS42S32800B-7TLI
Manufacturer:
ISSI
Quantity:
1 000
IS42S32800B
40
Figure 12.3.Random Row Write (Interleaving Banks)
* t
BS0,1
CAS#
A0-A9
RAS#
DQM
WE#
CKE
CLK
CS#
WR
A10
DQ
High
Hi-Z
> t
Command
Activate
Bank A
(Burst Length=8,CAS#Latency=3)
RAx
RAx
WR
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
(min.)
t
CK3
t
RCD
Command
Bank A
Write
DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1
CAx
Command
Activate
Bank B
RBx
RBx
Command
Bank B
Write
CBx
t
WR*
Precharge
Command
Bank A
DBx2 DBx3 DBx4 DBx5 DBx6
t
RP
Command
Activate
Bank A
Integrated Silicon Solution, Inc.
RAy
RAy
DBx7
Command
Bank A
CAy
DAy0 DAy1 DAy2
Write
t
WR*
Precharge
Command
Bank B
DAy3
07/21/09
Rev. F