IS42S32800B-7TL ISSI, Integrated Silicon Solution Inc, IS42S32800B-7TL Datasheet - Page 45

IC SDRAM 256MBIT 143MHZ 86TSOP

IS42S32800B-7TL

Manufacturer Part Number
IS42S32800B-7TL
Description
IC SDRAM 256MBIT 143MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS42S32800B-7TL

Package / Case
86-TSOPII
Memory Size
256M (8Mx32)
Format - Memory
RAM
Memory Type
SDRAM
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Data Bus Width
32 bit
Organization
2 Mbit x 32
Maximum Clock Frequency
143 MHz
Access Time
7 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
150 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
706-1025

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS42S32800B-7TL
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS42S32800B-7TL
Manufacturer:
ISSI
Quantity:
20 000
Part Number:
IS42S32800B-7TLI
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS42S32800B-7TLI
Manufacturer:
NS
Quantity:
25
IS42S32800B
Integrated Silicon Solution, Inc.
Rev. F
07/21/09
Figure 15.2.Interleaved Column Write Cycle (Burst Length=4,CAS#Latency=2)
A0-A9
BS0,1
RAS#
CAS#
DQM
WE#
CKE
CLK
CS#
A10
DQ
Hi-Z
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Command
Activate
Bank A
RAx
RAx
t
CK2
t
RCD
Command
Bank A
DAx0 DAx1 DAx2 DAx3
Write
CAx
t
RRD
Command
Activate
Bank B
RBw
RBw
Command
Bank B
Write
DBw0 DBw1
CBw
Command
Bank B
Write
DBx0 DBx1
CBx
Command
Bank B
DBy0 DBy1
Write
CBy
Command
Bank A
DAy0
Write
CAy
DAy1
Command
Bank B
DBz0 DBz1 DBz2 DBz3
Write
CBz
Precharge
Command
Bank A
t
RP
t
WR
Precharge
Command
Bank B
t
RP
45

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