IS42S32800B-7TL ISSI, Integrated Silicon Solution Inc, IS42S32800B-7TL Datasheet - Page 46

• Manufacturer Part Number: IS42S32800B-7TL
• Description: IC SDRAM 256MBIT 143MHZ 86TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS42S32800B-7TL

• Package / Case: 86-TSOPII
• Memory Size: 256M (8Mx32)
• Format - Memory: RAM
• Memory Type: SDRAM
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Data Bus Width: 32 bit
• Organization: 2 Mbit x 32
• Maximum Clock Frequency: 143 MHz
• Access Time: 7 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 150 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 706-1025

IS42S32800B
46
Figure 15.3.Interleaved Column Write Cycle (Burst Length=4,CAS#Latency=3)
BS0,1
A 0-A9
RAS#
CAS#
DQM
CKE
CS#
WE#
CLK
A10
DQ
Hi-Z
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Command
Activate
Bank A
RAx
RAx
t
CK3
t
RRD
t
RCD
> t
RRD(min)
Command
Bank A
Write
DAx0 DAx1 DAx2 DAx3
CAx RBw
Command
Activate
Bank B
RBw
Command
Bank B
DBw0 DBw1 DBx0 DBx1
CBw
Write
Command
Bank B
Write
CBx
Command
Bank B
Write
DBy0
CBy
DBy1 DAy0
Command
Bank A
Write
CAy
DAy1
Command
Bank B
t
DBz0 DBz1 DBz2 DBz3
Write
CBz
WR
Precharge
Integrated Silicon Solution, Inc.
Command
Bank A
t
RP
t
WR(min)
Precharge
Command
Bank B
07/21/09
Rev. F