M29W128GSL70ZS6E NUMONYX, M29W128GSL70ZS6E Datasheet - Page 34
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M29W128GSL70ZS6E
Manufacturer Part Number
M29W128GSL70ZS6E
Description
IC FLASH 128MBIT 70NS 64FBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29W128GSL70ZS6E.pdf
(85 pages)
Specifications of M29W128GSL70ZS6E
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
128M (16Mx8, 8Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W128GSL70ZS6E
Manufacturer:
ST
Quantity:
20
Company:
Part Number:
M29W128GSL70ZS6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Command interface
7.2.8
7.2.9
7.2.10
7.2.11
34/85
Unlock Bypass Block Erase command
The Unlock Bypass Block Erase command can be used to erase one or more memory
blocks at a time. The command requires two bus write operations instead of six using the
standard Block Erase command. The final bus write operation latches the address of the
block and starts the program/erase controller.
To erase multiple block (after the first two bus write operations have selected the first block
in the list), each additional block in the list can be selected by repeating the second bus write
operation using the address of the additional block.
The Unlock Bypass Block Erase command behaves in the same way as the Block Erase
command: the operation cannot be aborted, and a bus read operation to the memory
outputs the status register (bus reading operations from banks different from those including
the blocks being erased, output the memory array content). See
command
Unlock Bypass Chip Erase command
The Unlock Bypass Chip Erase command can be used to erase all memory blocks at a time.
The command requires two bus write operations only instead of six using the standard Chip
Erase command. The final bus write operation starts the program/erase controller.
The Unlock Bypass Chip Erase command behaves in the same way as the Chip Erase
command: the operation cannot be aborted, and a bus read operation to the memory
outputs the status register (see
Unlock Bypass Write to Buffer Program command
The Unlock Bypass Write to Buffer command can be used to program the memory in fast
program mode. The command requires two bus write operations less than the standard
Write to Buffer Program command.
The Unlock Bypass Write to Buffer Program command behaves in the same way as the
Write to Buffer Program command: the operation cannot be aborted and a bus read
operation to the memory outputs the status register (bus reading operations from a bank
different from the one including the block being programmed, output the memory array
content). See
The Write to Buffer Program Confirm command is used to confirm an Unlock Bypass Write
to Buffer Program command and to program the N+1 words loaded in the write buffer by this
command.
Unlock Bypass Enhanced Buffered Program command
The Unlock Bypass Enhanced Buffered Program command can be used to program the
memory in fast program mode. The command requires two address/data loading cycles less
than the standard Enhanced Buffered Program command (see
program
The Unlock Bypass Enhanced Buffered Program command behaves identically to the
enhanced buffered program operation using the Enhanced Buffered Program command.
The operation cannot be aborted and a bus read operation to the memory outputs the status
register (bus reading operations from a bank different from the one including the block being
programmed, output the memory array content). See
Program command
commands).
for details.
Section 7.2.1: Write to Buffer Program command
for details on the behavior.
Section 7.1.4: Chip Erase command
Section 7.2.2: Enhanced Buffered
Table 10: Enhanced buffered
for details.
Section 7.1.5: Block Erase
for details).
M29DW128G