M29W128GSL70ZS6E NUMONYX, M29W128GSL70ZS6E Datasheet - Page 74

• Manufacturer Part Number: M29W128GSL70ZS6E
• Description: IC FLASH 128MBIT 70NS 64FBGA
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W128GSL70ZS6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 128M (16Mx8, 8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Common flash interface (CFI)
Table 34.
1. The values given in the above table are valid for both packages.
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Address
1Ch
1Dh
1Bh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
CFI query system interface information
000Ah
0027h
0036h
0085h
0095h
0004h
0004h
0010h
0004h
0002h
0004h
0004h
Data
V
bit 7 to 4 value in volts
bit 3 to 0 value in 100 mV
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4 value in volts
bit 3 to 0 value in 100 mV
V
bit 7 to 4 value in volts
bit 3 to 0 value in 100 mV
1Fh 3Eh 0004h typical timeout for single byte/word program = 2
20h 40h 0004h typical timeout for minimum size write buffer program
= 2
Typical timeout for individual block erase = 2
Typical timeout for full Chip Erase = 2
Maximum timeout for word program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for Chip Erase = 2
CC
CC
PPH
PPH
n
logic supply minimum program/erase voltage
logic supply maximum program/erase voltage
µs
[programming] supply minimum program/erase voltage
[programming] supply maximum program/erase voltage
Description
(1)
n
n
times typical
ms
n
times typical
n
n
ms
times typical
n
times typical
n
µs
M29DW128G
200 µs
200 µs
Value
16 µs
16 µs
400 s
2.7 V
3.6 V
8.5 V
9.5 V
4.6 s
40 s
1 s