M29W128GSL70ZS6E NUMONYX, M29W128GSL70ZS6E Datasheet - Page 75

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M29W128GSL70ZS6E

Manufacturer Part Number
M29W128GSL70ZS6E
Description
IC FLASH 128MBIT 70NS 64FBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W128GSL70ZS6E

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
128M (16Mx8, 8Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W128GSL70ZS6E
Manufacturer:
ST
Quantity:
20
Part Number:
M29W128GSL70ZS6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
M29DW128G
Table 35.
Address
2Ch
2Dh
3Ch
2Ah
2Bh
2Eh
2Fh
3Ah
3Bh
27h
28h
29h
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
Device geometry definition
003Dh
0018h
0001h
0000h
0006h
0000h
0003h
0003h
0000h
0000h
0001h
0000h
0000h
0004h
0003h
0000h
0000h
0001h
0000h
0000h
0000h
0000h
Data
Device size = 2
Flash device interface code description
Maximum number of bytes in multiple-byte program or page= 2
Number of erase block regions. It specifies the number of regions
containing contiguous erase blocks of the same size.
Erase block region 1 information
2Dh-2Eh: number of erase blocks of identical size
2Fh-30h: block size (n*256 bytes)
Erase block region 2 information
Erase block region 3 information
Erase block region 4 information
n
in number of bytes
Description
Common flash interface (CFI)
n
256 Kbytes
x16 async.
16 Mbytes
64 Kbytes
64 Kbytes
62 blocks
4 blocks
4 blocks
Value
NA
64
3
75/85

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