M58LT256JST8ZA6E NUMONYX, M58LT256JST8ZA6E Datasheet - Page 46
M58LT256JST8ZA6E
Manufacturer Part Number
M58LT256JST8ZA6E
Description
IC FLASH 256MBIT 85NS 64TBGA
Manufacturer
NUMONYX
Datasheet
1.M58LT256JST8ZA6E.pdf
(108 pages)
Specifications of M58LT256JST8ZA6E
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
256M (16Mx16)
Speed
85ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M58LT256JST8ZA6E
Manufacturer:
STM
Quantity:
624
Company:
Part Number:
M58LT256JST8ZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Read modes
7.3
46/108
WAIT being gated by E, it remains active and does not revert to high impedance when G
goes High. So if two or more devices are connected to the system’s READY signal, to
prevent bus contention the WAIT signal of the M58LT256JST/B should not be directly
connected to the system’s READY signal.
WAIT reverts to high-impedance when Chip Enable, E, goes High.
See
suspend AC waveforms
Single synchronous read mode
Single synchronous read operations are similar to synchronous burst read operations,
except that the memory outputs the same data to the end of the operation.
Synchronous single reads are used to read the electronic signature, Status Register, CFI,
block protection status, Configuration Register status or Protection Register. When the
addressed bank is in read CFI, read Status Register or read electronic signature mode, the
WAIT signal is asserted during the X latency and at the end of a 4, 8 and 16-word burst. It is
only de-asserted when output data are valid.
See
AC waveforms
Table 23: Synchronous read AC characteristics
Table 23: Synchronous read AC characteristics
for details.
for details.
and
and
Figure 13: Synchronous burst read
Figure 11: Synchronous burst read
M58LT256JST, M58LT256JSB