M58LT256JST8ZA6E NUMONYX, M58LT256JST8ZA6E Datasheet - Page 81

• Manufacturer Part Number: M58LT256JST8ZA6E
• Description: IC FLASH 256MBIT 85NS 64TBGA
• Manufacturer: NUMONYX

Specifications of M58LT256JST8ZA6E

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 256M (16Mx16)
• Speed: 85ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-TBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M58LT256JST, M58LT256JSB
Table 38.
Offset
02Ch
027h
028h
029h
02Ah
02Bh
02Dh
02Eh
02Fh
02Fh
032h
034h
02Dh
02Eh
030h
031h
032h
033h
034h
035h
038h
030h
031h
033h
035h
038h
Device geometry definition
Reserved Reserved for future erase block region information
Reserved Reserved for future erase block region information
00FEh
00FEh
0019h
0001h
0000h
0006h
0000h
0002h
0000h
0000h
0002h
0003h
0000h
0080h
0000h
0003h
0000h
0080h
0000h
0000h
0000h
0002h
Data
Device size = 2
Flash device Interface code description
Maximum number of bytes in multi-byte program or page = 2
Number of identical sized erase block regions within the
device
bit 7 to 0 = x = number of erase block regions
Erase block region 1 information
Number of identical-size erase blocks = 00FEh+1
Erase block region 1 information
Block size in region 1 = 0200h * 256 Byte
Erase block region 2 information
Number of identical-size erase blocks = 0003h+1
Erase block region 2 information
Block size in region 2 = 0080h * 256 byte
Erase block region 1 Information
Number of identical-size erase block = 0003h+1
Erase block region 1 information
Block size in region 1 = 0080h * 256 bytes
Erase block region 2 information
Number of identical-size erase block = 00FEh+1
Erase block region 2 information
Block size in region 2 = 0200h * 256 bytes
n
in number of bytes
Description
Common Flash interface
n
128 Kbytes
128 Kbytes
32 Mbytes
32 Kbytes
32 Kbytes
64 Bytes
Async.
Value
x 16
255
255
NA
NA
2
4
4
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