M58LT256JST8ZA6E NUMONYX, M58LT256JST8ZA6E Datasheet - Page 84

• Manufacturer Part Number: M58LT256JST8ZA6E
• Description: IC FLASH 256MBIT 85NS 64TBGA
• Manufacturer: NUMONYX

Specifications of M58LT256JST8ZA6E

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 256M (16Mx16)
• Speed: 85ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-TBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Common Flash interface
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Table 41.
(P+1D)h = 127h
(P+1E)h = 128h
(P+20)h = 12Ah
(P+22)h = 12Ch
(P+1F)h = 129h
(P-21)h = 12Bh
Offset
Burst read information
0004h
0004h
0001h
0002h Synchronous mode read capability configuration 2
0003h
0007h
Data
Page-mode read capability
Number of synchronous mode read configuration fields that
follow.
Synchronous mode read capability configuration 1
Synchronous mode read capability configuration 3
Synchronous mode read capability configuration 4
bits 0-7 n’ such that 2
read-page bytes. See offset 0028h for device word width to
determine page-mode data output width.
bit 3-7 Reserved
bit 0-2 n’ such that 2
maximum number of continuous synchronous reads when
the device is configured for its maximum word width. A
value of 07h indicates that the device is capable of
continuous linear bursts that will output data until the
internal burst counter reaches the end of the device’s
burstable address space. This field’s 3-bit value can be
written directly to the read configuration register bit 0-2 if
the device is configured for its maximum word width. See
offset 0028h for word width to determine the burst data
output width.
n+1
n
Description
HEX value represents the number of
HEX value represents the
M58LT256JST, M58LT256JSB
16 bytes
Value
Cont.
16
4
4
8