M58LT256JST8ZA6E NUMONYX, M58LT256JST8ZA6E Datasheet - Page 51
M58LT256JST8ZA6E
Manufacturer Part Number
M58LT256JST8ZA6E
Description
IC FLASH 256MBIT 85NS 64TBGA
Manufacturer
NUMONYX
Datasheet
1.M58LT256JST8ZA6E.pdf
(108 pages)
Specifications of M58LT256JST8ZA6E
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
256M (16Mx16)
Speed
85ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M58LT256JST8ZA6E
Manufacturer:
STM
Quantity:
624
Company:
Part Number:
M58LT256JST8ZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
M58LT256JST, M58LT256JSB
9.4
Protection operations during erase suspend
Changes to block protection status can be performed during an erase suspend by using the
standard protection command sequences to unprotect or protect a block. This is useful in
the case when another block needs to be updated while an erase operation is in progress.
To change block protection during an erase operation, first write the Erase Suspend
command, then check the Status Register until it indicates that the erase operation has
been suspended. Next, write the desired protect command sequence to a block and the
protection status is changed. After completing any desired protect, read, or program
operations, resume the erase operation with the Erase Resume command.
If a block is protected during an erase suspend of the same block, the erase operation
completse when the erase is resumed. Protection operations cannot be performed during a
program suspend.
Block protection
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