GT28F320C3TA110 Intel, GT28F320C3TA110 Datasheet - Page 34

IC FLASH 32MBIT 110NS 47MBGA

GT28F320C3TA110

Manufacturer Part Number
GT28F320C3TA110
Description
IC FLASH 32MBIT 110NS 47MBGA
Manufacturer
Intel
Datasheets

Specifications of GT28F320C3TA110

Rohs Status
RoHS non-compliant
Format - Memory
FLASH
Memory Type
Advanced + Boot Block FLASH
Memory Size
32M (2M x 16)
Speed
110ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
47-MBGA
Other names
820978

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Part Number:
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Advanced+ Boot Block Flash Memory (C3)
Power Supply Decoupling
Flash memory power-switching characteristics require careful device decoupling. System
designers should consider the following three supply current issues:
Transient current magnitudes depend on the device outputs’ capacitive and inductive loading. Two-
line control and proper decoupling capacitor selection will suppress these transient voltage peaks.
Each flash device should have a 0.1 µF ceramic capacitor connected between each V
and between its V
be placed as close as possible to the package leads.
Thermal and DC Characteristics
Absolute Maximum Ratings
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.
These are stress ratings only. Operation beyond the “Operating Conditions” is not recommended,
and extended exposure beyond the “Operating Conditions” may affect device reliability.
NOTICE: Specifications are subject to change without notice. Verify with your local Intel Sales office that you have
the latest datasheet before finalizing a design
Extended Operating Temperature
Storage Temperature
Voltage On Any Pin (except V
V
V
Output Short Circuit Current
NOTES:
1. Minimum DC voltage is –0.5 V on input/output pins. During transitions, this level may
2. Maximum DC voltage on V
3. V
4. Output shorted for no more than one second. No more than one output shorted at a time.
PP
CC
During Read
During Block Erase and Program
Temperature under Bias
undershoot to –2.0 V for periods <20 ns. Maximum DC voltage on input/output pins is V
+0.5 V which, during transitions, may overshoot to V
done for a maximum of 1000 cycles on the main blocks and 2500 cycles on the parameter
blocks during program/erase. V
Standby current levels (I
Read current levels (I
Transient peaks produced by falling and rising edges of CE#.
Voltage (for Block Erase and Program) with Respect to GND
and V
PP
Program voltage is normally 1.65 V–3.6 V. Connection to a 11.4 V–12.6 V supply can be
CCQ
Supply Voltage with Respect to GND
PP
and VSS. These high- frequency, inherently low-inductance capacitors should
Parameter
CCR
CC
PP
CCS
)
and V
may overshoot to +14.0 V for periods <20 ns.
PP
)
may be connected to 12 V for a total of 80 hours maximum.
PP
.
) with Respect to GND
CC
+2.0 V for periods <20 ns.
–40 °C to +85 °C
–40 °C to +85 °C
–40 °C to +85 °C
–65 °C to +125 °C
–0.5 V to +3.7 V
–0.5 V to +13.5 V
–0.2 V to +3.6 V
100 mA
Maximum Rating
CC
CC
Datasheet
and GND,
Notes
1,2,3
1
4

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