GT28F320C3TA110 Intel, GT28F320C3TA110 Datasheet - Page 37

• Manufacturer Part Number: GT28F320C3TA110
• Description: IC FLASH 32MBIT 110NS 47MBGA
• Manufacturer: Intel

Specifications of GT28F320C3TA110

• Rohs Status: RoHS non-compliant
• Format - Memory: FLASH
• Memory Type: Advanced + Boot Block FLASH
• Memory Size: 32M (2M x 16)
• Speed: 110ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 47-MBGA
• Other names: 820978

Datasheet
Table 11. DC Current Characteristics (Sheet 3 of 3)
I
I
I
I
I
NOTES:
PPR
PPW
PPE
PPES
PPWS
1. All currents are in RMS unless otherwise noted. Typical values at nominal V
2. The test conditions V
3. Automatic Power Savings (APS) reduces I
4. Sampled, not 100% tested.
5. I
Sym
V
inputs).
is sum of I
and I
CCES
CCQ
/
CCR
V
V
V
V
Current
voltage listed at the top of each column. V
or I
PP
PP
PP
CC
.
CCWS
Erase Current
CCES
Read Current
Program Current
Erase Suspend
Parameter
is specified with device de-selected. If device is read while in erase suspend, current draw
and I
CCR
CC
Max, V
. If the device is read while in program suspend, current draw is the sum of I
CCQ
V
Note
V
1,4
1,4
1,4
1,4
CCQ
CC
Max, V
2.7 V–3.6 V
2.7 V–3.6 V
0.05
0.05
Typ
0.2
50
50
CC
Intel
2
8
8
CCR
Min, and V
to approximately standby levels in static operation (CMOS
Max
£
200
200
CC
0.1
0.1
22
22
15
5
Advanced+ Boot Block Flash Memory (C3)
Max = 3.3 V for 0.25 m 32-Mbit devices.
2.7 V–2.85 V
1.65 V–2.5 V
0.05
0.05
CCQ
Typ
0.2
50
16
50
2
8
Min refer to the maximum or minimum V
Max
200
200
0.1
0.1
22
45
15
5
0.05
0.05
2.7 V–3.3 V
1.8 V–2.5 V
Typ
0.2
50
16
50
2
8
CC
, T
Max
200
200
0.1
0.1
22
45
A
15
5
= +25 °C.
Unit
mA
mA
mA
mA
µA
µA
µA
µA
Conditions
V
V
V
Program in
Progress
V
(12v)
Program in
Progress
V
Erase in
Progress
V
(12v) ,
Erase in
Progress
V
Program or
Erase
Suspend in
Progress
V
(12v) ,
Program or
Erase
Suspend in
Progress
PP
PP
PP
PP
PP
PP
PP
PP
Test
> V
= V
=V
= V
= V
= V
= V
CC
CCWS
V
PP1,
CC
CC
PP2
PP1,
PP2
PP1,
PP2
or
37