NGTB15N60S1EG ON Semiconductor, NGTB15N60S1EG Datasheet

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NGTB15N60S1EG

Manufacturer Part Number
NGTB15N60S1EG
Description
IGBT Transistors 15A 600V IGBT
Manufacturer
ON Semiconductor
Datasheet
1.NGTB15N60S1EG.pdf (10 pages)

Specifications of NGTB15N60S1EG

Rohs
yes
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
30 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
47 W
Package / Case
TO-220
Mounting Style
Through Hole

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NGTB15N60S1EG
Manufacturer:
ON Semiconductor
Quantity:
50
Company:
Amily Shenzhen XNWY Technology Co., Ltd Amily Shenzhen XNWY Technology Co., Ltd
Part Number:
NGTB15N60S1EG
0
NGTB15N60S1EG
IGBT - Short-Circuit Rated
cost effective Non−Punch Through (NPT) Trench construction, and
provides superior performance in demanding switching applications.
Offering both low on state voltage and minimal switching loss, the
IGBT is well suited for motor drive control and other hard switching
applications. Incorporated into the device is a rugged co−packaged
reverse recovery diode with a low forward voltage.
Features
•
•
•
•
•
•
Typical Applications
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 3
ABSOLUTE MAXIMUM RATINGS
Collector−emitter voltage
Collector current
@ T
@ T
Pulsed collector current, T
T
Diode forward current
@ T
@ T
Diode pulsed current, T
T
Gate−emitter voltage
Power dissipation
@ T
@ T
Short circuit withstand time
V
Operating junction temperature range
Storage temperature range
Lead temperature for soldering, 1/8” from
case for 5 seconds
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
Low Saturation Voltage Resulting in Low Conduction Loss
Low Switching Loss in Higher Frequency Applications
Soft Fast Reverse Recovery Diode
5 ms Short Circuit Capability
Excellent Current versus Package Size Performance Density
This is a Pb−Free Device
White Goods Appliance Motor Control
General Purpose Inverter
AC and DC Motor Control
Jmax
Jmax
GE
C
C
C
C
C
C
= 15 V, V
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
CE
= 400 V, T
Rating
pulse
pulse
J
limited by
v +150°C
limited by
Symbol
V
T
V
I
T
I
t
P
CES
T
CM
FM
SC
SLD
I
I
stg
GE
C
F
D
J
−55 to
−55 to
Value
+150
+150
$20
600
120
120
117
260
30
15
30
15
47
5
1
Unit
ms
°C
°C
°C
W
V
A
A
A
A
V
NGTB15N60S1EG
Device
ORDERING INFORMATION
A
Y
WW
G
G
MARKING DIAGRAM
C
G
http://onsemi.com
V
E
15 A, 600 V
CEsat
= Assembly Location
= Year
= Work Week
= Pb−Free Package
15N60S1G
(Pb−Free)
Package
TO−220
AYWW
Publication Order Number:
= 1.5 V
C
C
E
NGTB15N60S1E/D
CASE 221A
STYLE 9
TO−220
50 Units / Rail
Shipping

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NGTB15N60S1EG Summary of contents

Page 1

... 117 −55 to °C J +150 T −55 to °C stg +150 T 260 °C SLD NGTB15N60S1EG 1 http://onsemi.com 15 A, 600 1.5 V CEsat TO−220 CASE 221A G STYLE MARKING DIAGRAM 15N60S1G AYWW A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ...

Page 2

THERMAL CHARACTERISTICS Rating Thermal resistance junction to case, for IGBT Thermal resistance junction to case, for Diode Thermal resistance junction to ambient ELECTRICAL CHARACTERISTICS (T Parameter STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage Collector−emitter ...

Page 3

ELECTRICAL CHARACTERISTICS (T Parameter DIODE CHARACTERISTIC Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current = 25°C unless otherwise specified) J Test Conditions T = 25° ...

Page 4

T = 25° COLLECTOR−EMITTER VOLTAGE (V) CE Figure 1. Output Characteristics ...

Page 5

T = 25° −40° 0 FORWARD VOLTAGE (V) F Figure 7. Diode Forward Characteristics 0.7 Eon 0.6 0.5 Eoff 0.4 0.3 0.2 0 ...

Page 6

V = 400 0 150°C J 0.6 0 Rg, GATE RESISTOR (W) Figure 13. Switching Time vs. Rg ...

Page 7

Duty Cycle 20% 10% 0 0.01 1% Single Pulse 0.001 0.000001 0.00001 0.0001 Figure 19. IGBT Transient Thermal Impedance 10 50% Duty Cycle 20 0.1 1% Single Pulse 0.01 0.001 0.000001 ...

Page 8

Figure 22. Definition of Turn On Waveform http://onsemi.com 8 ...

Page 9

Figure 23. Definition of Turn Off Waveform http://onsemi.com 9 ...

Page 10

... SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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