NGTB15N60S1EG ON Semiconductor, NGTB15N60S1EG Datasheet - Page 7

• Manufacturer Part Number: NGTB15N60S1EG
• Description: IGBT Transistors 15A 600V IGBT
• Manufacturer: ON Semiconductor

Specifications of NGTB15N60S1EG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 47 W
• Package / Case: TO-220
• Mounting Style: Through Hole

0.001
0.001
0.01
0.01
0.000001
0.000001
0.1
0.1
10
10
1
1
50% Duty Cycle
50% Duty Cycle
Single Pulse
1%
20%
20%
2%
10%
10%
5%
2%
5%
Single Pulse
0.00001
0.00001
1%
0.0001
0.0001
Figure 21. Test Circuit for Switching Characteristics
Figure 20. Diode Transient Thermal Impedance
Figure 19. IGBT Transient Thermal Impedance
0.001
TYPICAL CHARACTERISTICS
0.001
http://onsemi.com
PULSE TIME (sec)
PULSE TIME (sec)
0.01
0.01
C
C
i
Junction
i
= t
Junction
= t
7
i
/R
i
/R
i
i
R
C
R
C
1
1
1
1
0.1
0.1
Duty Factor = t
Peak T
R
C
R
C
2
2
2
2
J
= P
DM
Duty Factor = t
Peak T
1
1
1
x Z
/t
2
R
R
qJC
qJC
qJC
J
= P
+ T
= 1.06
= 3.76
R
C
R
C
DM
C
n
n
n
n
10
1
10
x Z
/t
2
Case
Case
qJC
+ T
0.04097
0.12956
0.01895
0.20199
1.62730
0.57301
0.45453
0.40199
0.21558
R
0.05010
0.15051
R
0.33992
0.10550
0.20020
0.11423
C
i
0.1
i
(°C/W)
0.1
(°C/W)
100
100
0.00498
1.0E−5
1.0E−4
1.0E−7
1.0E−6
7.1E−5
0.00999
t
0.002
0.003
1.0E−4
7.1E−5
0.002
i
0.03
t
0.003
0.1
0.03
i
(sec)
0.1
(sec)
1000
1000