NGTB15N60S1EG ON Semiconductor, NGTB15N60S1EG Datasheet - Page 6

• Manufacturer Part Number: NGTB15N60S1EG
• Description: IGBT Transistors 15A 600V IGBT
• Manufacturer: ON Semiconductor

Specifications of NGTB15N60S1EG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 47 W
• Package / Case: TO-220
• Mounting Style: Through Hole

1000
0.01
100
1.2
0.9
0.6
0.3
1.2
0.9
0.6
0.3
0.1
10
0
0
1
1
175
5
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
V
I
Rg = 22 W
T
V
V
I
T
C
C
J
GE
CE
GE
J
225
= 15 A
= 15 A
15
= 150°C
= 150°C
V
V
= 15 V
CE
CE
= 400 V
= 15 V
Figure 15. Switching Loss vs. V
Figure 13. Switching Time vs. Rg
C
Figure 17. Safe Operating Area
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
dc operation
= 25°C
275
25
Rg, GATE RESISTOR (W)
10
325
35
1 ms
375
45
425
55
100 ms
100
TYPICAL CHARACTERISTICS
475
65
50 ms
Eon
Eoff
Eon
CE
525
75
Eoff
http://onsemi.com
1000
575
85
6
1000
1000
100
1000
0.01
10
100
100
0.1
10
1
10
1
1
5
1
175
t
d(off)
V
Figure 18. Reverse Bias Safe Operating Area
t
d(on)
GE
t
t
f
r
15
225
= 15 V, T
V
V
Figure 14. Switching Time vs. Rg
CE
CE
Figure 16. Switching Time vs. V
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
25
275
Rg, GATE RESISTOR (W)
C
= 125°C
10
35
325
45
375
55
425
100
V
V
I
T
65
C
475
CE
GE
J
= 15 A
V
I
Rg = 22 W
T
= 150°C
C
J
GE
= 400 V
= 15 V
= 15 A
= 150°C
CE
= 15 V
75
525
t
t
d_off
d_on
t
t
f
r
1000
85
575