NGTB15N60S1EG ON Semiconductor, NGTB15N60S1EG Datasheet - Page 3

• Manufacturer Part Number: NGTB15N60S1EG
• Description: IGBT Transistors 15A 600V IGBT
• Manufacturer: ON Semiconductor

Specifications of NGTB15N60S1EG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 47 W
• Package / Case: TO-220
• Mounting Style: Through Hole

ELECTRICAL CHARACTERISTICS
DIODE CHARACTERISTIC
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Parameter
(T
J
= 25°C unless otherwise specified)
http://onsemi.com
I
I
F
F
Test Conditions
di
= 15 A, V
di
= 15 A, V
F
F
/dt = 200 A/µs
T
/dt = 200 A/µs
T
J
J
= 125°C
= 25°C
3
R
R
= 200 V
= 200 V
Symbol
I
I
Q
Q
rrm
rrm
t
t
rr
rr
rr
rr
Min
−
−
−
−
−
−
1000
Typ
270
350
350
7.5
5
Max
−
−
−
−
−
−
Unit
ns
nc
ns
nc
A
A