NGTB15N60S1EG ON Semiconductor, NGTB15N60S1EG Datasheet - Page 5

• Manufacturer Part Number: NGTB15N60S1EG
• Description: IGBT Transistors 15A 600V IGBT
• Manufacturer: ON Semiconductor

Specifications of NGTB15N60S1EG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 47 W
• Package / Case: TO-220
• Mounting Style: Through Hole

35
30
25
20
15
10
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
5
0
0
0
0
8
0
V
V
T
Rg = 22 W
Figure 7. Diode Forward Characteristics
Figure 9. Switching Loss vs. Temperature
J
CE
GE
= 150°C
20
= 400 V
= 15 V
12
0.5
Figure 11. Switching Loss vs. I
T
J
, JUNCTION TEMPERATURE (°C)
V
I
C
40
F
, COLLECTOR CURRENT (A)
, FORWARD VOLTAGE (V)
Eon
Eoff
16
60
1
80
20
T
J
1.5
−40°C
= 25°C
100
24
V
V
I
Rg = 22 W
C
Eoff
TYPICAL CHARACTERISTICS
CE
GE
120
Eon
= 15 A
150°C
= 400 V
= 15 V
2
C
28
140
http://onsemi.com
2.5
160
32
5
1000
1000
100
20
15
10
100
5
0
10
10
1
1
0
8
0
V
V
T
Rg = 22 W
10
Figure 10. Switching Time vs. Temperature
V
V
I
Rg = 22 W
C
J
CE
GE
CE
GE
= 150°C
t
= 15 A
t
20
t
d(on)
t
d(off)
f
r
= 400 V
= 15 V
= 400 V
= 15 V
12
20
Figure 12. Switching Time vs. I
Figure 8. Typical Gate Charge
T
J
, JUNCTION TEMPERATURE (°C)
I
40
C
, COLLECTOR CURRENT (A)
Q
30
G
, GATE CHARGE (nC)
16
60
40
50
20
80
V
60
CES
100
24
= 480 V
70
120
80
t
t
d(on)
d(off)
t
t
C
f
r
28
140
90
100
160
32