IKW50N65H5FKSA1 Infineon Technologies, IKW50N65H5FKSA1 Datasheet
IKW50N65H5FKSA1
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IKW50N65H5FKSA1 Summary of contents
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IGBT Highspeed5IGBTinTRENCHSTOP fastandsoftantiparalleldiode IKW50N65H5 650VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl TM 5technologycopackedwithRAPID1 ...
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... Highspeed5IGBTinTRENCHSTOP fastandsoftantiparalleldiode FeaturesandBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQ g •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications: •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters • ...
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TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Maximumratings Parameter Collector-emitter voltage DCcollectorcurrent,limitedbyT T =25°Cvaluelimitedbybondwire C T =100°C C Pulsedcollectorcurrent,t limitedbyT p TurnoffsafeoperatingareaV 650V,T CE Diodeforwardcurrent,limitedbyT T =25°Cvaluelimitedbybondwire C T =100°C C Diodepulsedcurrent,t limitedbyT p Gate-emitter voltage TransientGate-emittervoltage(t p PowerdissipationT =25°C C PowerdissipationT =100°C C Operating junction ...
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ElectricalCharacteristic,atT =25°C,unlessotherwisespecified vj Parameter StaticCharacteristic Collector-emitter breakdown voltage V Collector-emitter saturation voltage V Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance ElectricalCharacteristic,atT =25°C,unlessotherwisespecified vj Parameter DynamicCharacteristic Input capacitance Output capacitance Reverse transfer capacitance ...
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Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy DiodeCharacteristic,atT =25°C vj Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current I Diode peak rate of fall of ...
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DiodeCharacteristic,atT =150°C vj Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current I Diode peak rate of fall of reverse recoverycurrentduringt b Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current I ...
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DC 0 100 V ,COLLECTOR-EMITTERVOLTAGE[V] CE Figure 1. Forwardbiassafeoperatingarea (D=0,T =25°C,T 175°C; Recommendeduseat ...
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V =20V GE 18V 105 15V 90 12V 75 10V ,COLLECTOR-EMITTERVOLTAGE[V] CE Figure 5. Typicaloutputcharacteristic (T =150°C) vj 2.50 I =12, ...
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G Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,T =150°C, =15/0V,I =25A,Dynamictestcircuit Figure E) 6.0 typ. min. 5.5 ...
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E off E 2. 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0. ,GATERESISTOR Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,T =150°C, =15/0V,I =25A,Dynamictestcircuit Figure ...
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C iss 1E+4 C oss C rss 1000 100 ,COLLECTOR-EMITTERVOLTAGE[V] CE Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (V =0V,f=1MHz 0.1 0. [K/W]: 0.4131024 0.4494995 i [s]: 1.4E-4 1.3E-3 i ...
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T =25° 25A j F 1.4 T =150° 25A j F 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 500 700 900 1100 di /dt,DIODECURRENTSLOPE[A/µs] F Figure 21. Typicalreverserecoverychargeasa functionofdiodecurrentslope (V =400V) ...
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1.8 1.6 1.4 1.2 1.0 0 100 125 T ,JUNCTIONTEMPERATURE[°C] vj Figure 25. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Highspeedswitchingseriesfifthgeneration =13,5A =27A =54A 150 175 14 IKW50N65H5 Rev.1.1,2012-11-09 ...
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Highspeedswitchingseriesfifthgeneration PG-TO247-3 15 IKW50N65H5 Rev.1.1,2012-11-09 ...
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Highspeedswitchingseriesfifthgeneration 16 IKW50N65H5 t Rev.1.1,2012-11-09 ...
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RevisionHistory IKW50N65H5 Revision:2012-11-09,Rev.1.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2012-11-09 Preliminary data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2012InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems ...