IKW50N65H5FKSA1 Infineon Technologies, IKW50N65H5FKSA1 Datasheet - Page 11

• Manufacturer Part Number: IKW50N65H5FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IKW50N65H5FKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 305 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 56 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IKW50N65H5 SP001001734

Figure 13. Typicalswitchingenergylossesasa
Figure 15. Typicalswitchingenergylossesasa
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
5
V
CE
functionofgateresistor
(inductiveload,T
V
Figure E)
functionofcollectoremittervoltage
(inductiveload,T
I
Figure E)
15
C
,COLLECTOR-EMITTERVOLTAGE[V]
GE
=25A,r
E
E
E
E
E
E
250
off
on
ts
off
on
ts
=15/0V,I
25
r
G
,GATERESISTOR[ ]
G
300
=12 ,Dynamictestcircuitin
35
C
=25A,Dynamictestcircuitin
vj
vj
350
=150°C,V
=150°C,V
45
55
400
CE
GE
65
=400V,
=15/0V,
Highspeedswitchingseriesfifthgeneration
450
75
500
85
11
Figure 14. Typicalswitchingenergylossesasa
Figure 16. Typicalgatecharge
1.2
1.0
0.8
0.6
0.4
0.2
0.0
16
14
12
10
8
6
4
2
0
25
0
functionofjunctiontemperature
(inductiveload,V
I
Figure E)
(I
C
T
C
=25A,r
E
E
E
130V
520V
vj
=50A)
50
20
off
on
ts
,JUNCTIONTEMPERATURE[°C]
Q
GE
G
=12 ,Dynamictestcircuitin
,GATECHARGE[nC]
75
40
CE
100
60
=400V,V
IKW50N65H5
125
80
Rev.1.1,2012-11-09
GE
=15/0V,
150
100
175
120