IKW50N65H5FKSA1 Infineon Technologies, IKW50N65H5FKSA1 Datasheet - Page 13

• Manufacturer Part Number: IKW50N65H5FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IKW50N65H5FKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 305 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 56 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IKW50N65H5 SP001001734

Figure 21. Typicalreverserecoverychargeasa
Figure 23. Typicaldiodepeakrateoffallofreverse
-100
-150
-200
-250
-300
-350
-400
-450
-500
-50
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0
500
500
di
di
functionofdiodecurrentslope
(V
recoverycurrentasafunctionofdiode
currentslope
(V
F
F
T
T
T
T
R
R
/dt,DIODECURRENTSLOPE[A/µs]
/dt,DIODECURRENTSLOPE[A/µs]
=400V)
=400V)
j
j
j
j
=25°C, I
=150°C, I
700
=25°C, I
=150°C, I
700
F
F
F
F
= 25A
= 25A
900
900
= 25A
= 25A
1100
1100
1300
1300
Highspeedswitchingseriesfifthgeneration
1500
1500
13
Figure 22. Typicalreverserecoverycurrentasa
Figure 24. Typicaldiodeforwardcurrentasafunction
25
23
21
19
17
15
13
11
81
72
63
54
45
36
27
18
9
7
5
9
0
500
0.0
di
functionofdiodecurrentslope
(V
offorwardvoltage
F
T
T
T
T
R
/dt,DIODECURRENTSLOPE[A/µs]
=400V)
j
j
j
j
=25°C, I
=150°C, I
700
=25°C
=150°C
0.5
V
F
,FORWARDVOLTAGE[V]
F
F
= 25A
900
= 25A
1.0
1100
IKW50N65H5
1.5
Rev.1.1,2012-11-09
1300
2.0
1500
2.5