IKW50N65H5FKSA1 Infineon Technologies, IKW50N65H5FKSA1 Datasheet - Page 7

• Manufacturer Part Number: IKW50N65H5FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IKW50N65H5FKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 305 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 56 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IKW50N65H5 SP001001734

DiodeCharacteristic,atT
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current I
Diode peak rate of fall of reverse
recoverycurrentduringt
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current I
Diode peak rate of fall of reverse
recoverycurrentduringt
b
b
vj
=150°C
t
Q
di
t
Q
di
rr
rrm
rr
rrm
rr
rr
rr
rr
/dt
/dt
Highspeedswitchingseriesfifthgeneration
T
V
I
di
T
V
I
di
F
F
vj
vj
R
=25.0A,
R
=6.0A,
F
F
=150°C,
=150°C,
=400V,
/dt=1200A/µs
=400V,
/dt=1200A/µs
7
-
-
-
-
-
-
-
-
IKW50N65H5
-300
-600
1.31
22.6
0.64
19.8
Rev.1.1,2012-11-09
90
50
-
-
-
-
-
-
-
-
A/µs
A/µs
µC
µC
ns
ns
A
A