PSMN4R3-100PS,127 NXP Semiconductors, PSMN4R3-100PS,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN4R3-100PS,127
• Description: MOSFET N-Ch 100V 4.3 m? std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-100PS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 4.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 63 ns
• Gate Charge Qg: 170 nC
• Power Dissipation: 338 W
• Rise Time: 91 ns
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN4R3-100PS
Product data sheet
Fig 3.
(A)
I
10
D
10
10
10
-1
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
1
DSon
All information provided in this document is subject to legal disclaimers.
= V
DS
/ I
D
Rev. 1 — 27 October 2011
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
10
DC
PSMN4R3-100PS
10
2
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
V
DS
(V)
© NXP B.V. 2011. All rights reserved.
003aag822
10
3
4 of 15