PSMN4R3-100PS,127 NXP Semiconductors, PSMN4R3-100PS,127 Datasheet - Page 4
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PSMN4R3-100PS,127
Manufacturer Part Number
PSMN4R3-100PS,127
Description
MOSFET N-Ch 100V 4.3 m? std level MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN4R3-100PS127.pdf
(15 pages)
Specifications of PSMN4R3-100PS,127
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Resistance Drain-source Rds (on)
4.3 mOhms
Configuration
Single
Mounting Style
Through Hole
Package / Case
TO-220AB
Fall Time
63 ns
Gate Charge Qg
170 nC
Power Dissipation
338 W
Rise Time
91 ns
Factory Pack Quantity
50
NXP Semiconductors
PSMN4R3-100PS
Product data sheet
Fig 3.
(A)
I
10
D
10
10
10
-1
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
1
DSon
All information provided in this document is subject to legal disclaimers.
= V
DS
/ I
D
Rev. 1 — 27 October 2011
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
10
DC
PSMN4R3-100PS
10
2
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
V
DS
(V)
© NXP B.V. 2011. All rights reserved.
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