BUZ73 H Infineon Technologies, BUZ73 H Datasheet - Page 4
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BUZ73 H
Manufacturer Part Number
BUZ73 H
Description
MOSFET N-Channel 200V Transistor
Manufacturer
Infineon Technologies
Datasheet
1.BUZ73_H.pdf
(10 pages)
Specifications of BUZ73 H
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Resistance Drain-source Rds (on)
0.4 Ohms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Fall Time
30 nS
Minimum Operating Temperature
- 55 C
Power Dissipation
40 W
Rise Time
40 nS
Typical Turn-off Delay Time
55 nS
Part # Aliases
BUZ73HXK BUZ73HXKSA1 SP000683000
Electrical Characteristics, at T
Rev. 2.4
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
C
C
GS
R
R
= 25 ˚C
= 25 ˚C
= 100 V, I
= 100 V, I
= 0 V, I
F
F =
F =
= 14 A
l
l
S,
S,
d i
d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
j
= 25˚C, unless otherwise specified
Page 4
Symbol
I
I
V
t
Q
S
SM
rr
SD
rr
-
min.
-
-
-
-
Values
typ.
-
-
0.6
1.3
200
-
-
max.
1.7
7
28
2009-11-10
BUZ 73 H
A
V
ns
µC
Unit