BUZ73 H Infineon Technologies, BUZ73 H Datasheet - Page 6
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BUZ73 H
Manufacturer Part Number
BUZ73 H
Description
MOSFET N-Channel 200V Transistor
Manufacturer
Infineon Technologies
Datasheet
1.BUZ73_H.pdf
(10 pages)
Specifications of BUZ73 H
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Resistance Drain-source Rds (on)
0.4 Ohms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Fall Time
30 nS
Minimum Operating Temperature
- 55 C
Power Dissipation
40 W
Rise Time
40 nS
Typical Turn-off Delay Time
55 nS
Part # Aliases
BUZ73HXK BUZ73HXKSA1 SP000683000
Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Rev. 2.4
D
I
D
I
DS
D
= ƒ( V
≥
2 x I
13
11
10
16
12
10
A
9
8
A
7
6
5
4
3
2
1
0
8
6
4
2
0
DS
0
0
D
)
P
x R
tot
p
1
p
= 80 µs
= 40W
= 80 µs
DS(on)max
2
2
3
4
l
4
k
j
D
5
i
= f ( V
h
6
6
g
GS
7
)
8
8
e
c
a
f
d
b
V
V
V GS [V]
V
GS
e
f
g
h
i
j
k 10.0
l
a
b
c
d
DS
V
20.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
10
11
Page 6
Typ. forward transconductance g
parameter: t
V
R
g
Typ. drain-source on-resistance
R
parameter: V
DS
fs
DS (on)
DS (on)
≥
2 x I
6.0
5.0
3.5
4.5
4.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.3
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
S
Ω
0
D
0
= ƒ( I
V
V
x R
GS
GS
4.0
4.5
a
a
p
= 80 µs,
[V] =
[V] =
D
GS
DS(on)max
5.0
2
b
2
)
a
5.5
c
4
4
6.0
d
b
6.5
e
6
7.0
6
f
c
fs
7.5
g
8
= f
8
8.0
h
( I
d
10
D
9.0
i
)
2009-11-10
10.0
BUZ 73 H
A
j
I
D
I
A
D
e
20.0
k
k
j
h
f
12
i
14
g