BUZ73 H Infineon Technologies, BUZ73 H Datasheet - Page 9

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BUZ73 H

Manufacturer Part Number
BUZ73 H
Description
MOSFET N-Channel 200V Transistor
Manufacturer
Infineon Technologies
Datasheet

Specifications of BUZ73 H

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Resistance Drain-source Rds (on)
0.4 Ohms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Fall Time
30 nS
Minimum Operating Temperature
- 55 C
Power Dissipation
40 W
Rise Time
40 nS
Typical Turn-off Delay Time
55 nS
Part # Aliases
BUZ73HXK BUZ73HXKSA1 SP000683000
BUZ 73 H
Package Drawing: TO220-3
Page 9
Rev. 2.4
2009-11-10

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