BUZ32 H Infineon Technologies, BUZ32 H Datasheet - Page 2

• Manufacturer Part Number: BUZ32 H
• Description: MOSFET N-Channel 200V Transistor
• Manufacturer: Infineon Technologies

Specifications of BUZ32 H

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.5 A
• Resistance Drain-source Rds (on): 0.4 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 30 nS
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 75 W
• Rise Time: 40 nS
• Typical Turn-off Delay Time: 55 nS
• Part # Aliases: BUZ32HXK BUZ32HXKSA1 SP000682998

Electrical Characteristics, at T
Rev. 2.4
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-Source on-resistance
V
GS
GS =
DS
DS
GS
GS
= 200 V, V
= 200 V, V
= 0 V, I
= 20 V, V
= 10 V, I
V
DS,
I
D
D
D
= 1 mA
= 0.25 mA, T
DS
= 6 A
GS
GS
= 0 V
= 0 V, T
= 0 V, T
j
j
j
= 25 ˚C
= 125 ˚C
= 25 ˚C
j
= 25˚C, unless otherwise specified
Page 2
V
V
I
I
R
Symbol
DSS
GSS
GS(th)
(BR)DSS
DS(on)
min.
-
-
-
-
200
2.1
Values
typ.
-
10
0.3
0.1
10
3
max.
-
1
100
100
0.4
4
2009-11-10
BUZ 32 H
µA
nA
Ω
Unit
V