BUZ32 H Infineon Technologies, BUZ32 H Datasheet - Page 4

• Manufacturer Part Number: BUZ32 H
• Description: MOSFET N-Channel 200V Transistor
• Manufacturer: Infineon Technologies

Specifications of BUZ32 H

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.5 A
• Resistance Drain-source Rds (on): 0.4 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 30 nS
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 75 W
• Rise Time: 40 nS
• Typical Turn-off Delay Time: 55 nS
• Part # Aliases: BUZ32HXK BUZ32HXKSA1 SP000682998

Electrical Characteristics, at T
Rev. 2.4
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
C
C
GS
R
R
= 25 ˚C
= 25 ˚C
= 100 V, I
= 100 V, I
= 0 V, I
F
F =
F =
= 19 A
l
l
S,
S,
d i
d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
j
= 25˚C, unless otherwise specified
I
I
V
t
Q
Symbol
S
SM
rr
SD
rr
Page 4
min.
-
-
-
-
-
Values
typ.
-
-
0.6
1.4
200
-
-
max.
1.7
9.5
38
2009-11-10
BUZ 32 H
V
ns
µC
Unit
A